Project leader: Normuradov Muradulla, Doctor of Physical and Mathematical Sciences, Professor
Field of science: Mathematics and physics. Mechanical Sciences.
Information about the project: Currently, there is interest in thin films of transition metals and their silicides formed on the surface of silicon single crystals, as well as dielectric substrates, primarily in solid-state electronics, with the creation of materials with unique physical properties.
The properties of thin films can differ significantly from the properties of bulk materials, especially films with a thickness of several nanometers. Such anomalous properties are associated with the occurrence of dimensional quantum phenomena, when the dimensions of nanocrystals are on the same level as the de Broglie wavelength of electrons.
Currently, existing methods for depositing thin films using low-temperature plasma and ion radiation make it possible to obtain films from various materials (including refractory and multicomponent compositions), which is practically impossible using the thermal vacuum method.
The creation of new devices based on thin films obtained by the low-energy ion-plasma method makes it possible to establish the patterns of formation of metal/semiconductor/dielectric interfaces and their properties, as well as the formation of nanoplasmas at early stages of size. films and high-temperature solid-phase reactions require detailed knowledge of the growth mechanism.
Implementing organization: Karshi State University
Project cost: 1,936,350,000 (one billion nine hundred thirty-six million three hundred fifty thousand) soums.